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MW6S010MR1 MW6S010GMR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS ? 900 MHz
970
16
48
910
?26
?8
IRL
Gps
IMD
f, FREQUENCY (MHz)
VDD
= 28 Vdc, P
out
= 10 W (Avg.)
IDQ
= 125 mA, 100 kHz Tone Spacing
44
?10
40
?12
36
?14
32
?16
28
?18
24
?20
20
?22
920 940930 950 960
Figure 3. Two-Tone Wideband Performance
@ Pout
= 10 Watts
Pout, OUTPUT POWER (WATTS) AVG.
15
20
1
IDQ
= 190 mA
VDD
= 28 Vdc, f = 945 MHz
Two?Tone Measurements
100 kHz Tone Spacing
19
17
16
10 100
Figure 4. Two-Tone Power Gain versus
Output Power
110100
?70
?10
0.1
7th Order
VDD
= 28 Vdc, I
DQ
= 125 mA
f = 945 MHz, Two?Tone Measurements
100 kHz Tone Spacing
5th Order
3rd Order
?20
?30
?40
?50
?60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Intermodulation Distortion Products
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
1 10010
?55
?15
0.1
7th Order
TWO?TONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 10 W (Avg.)
IDQ
= 125 mA, Two?Tone Measurements
Center Frequency = 945 MHz
5th Order
3rd Order
?20
?25
?30
?35
?40
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
29
48
P3dB = 43.14 dBm (20.61 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 125 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
Center Frequency = 945 MHz
46
44
42
40
38
21 23 25
Actual
Ideal
27
19
Figure 7. Pulse CW Output Power versus
Input Power
IMD, INTERMODULATION DISTORTION (dBc)
P
out
, OUTPUT POWER (dBm)
18
90 mA
125 mA
P1dB = 42.23 dBm (16.71 W)
?50
?45
?24
0.1
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ηD
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